March 17, 2008

MGQ612 IGBT Module Developed
Ideal for Plasma TV Panel Driving
2 IGBTs and 2 diodes in 1 package
Reduces PCB Mounting Area to 1/3

Sanken Electric Co., Ltd. has developed the MGQ612 IGBT module for the panel driving circuit of plasma TVs (600 V breakdown voltage, 200 A pulse current, TO-3P 5-pin package), starting shipping samples on March 25. Shipping of mass-production units will start in May, 2008 with 200k units/month, then ramping up to 600k units/month in August, 2008. The tax-excluded sample price is 1,000 yen.
   
1. Development Background and Product Overview
  As a lot of power elements (IGBTs, diodes, etc.) with heatsinks are mounted on the printed circuit board of the panel driving circuit of a plasma TV, a large mounting surface is required for the elements, but there have been demands for the reduction of the number of components from the standpoint of their footprints and costs occupied by these power elements.

In response, Sanken Electric has developed the MGQ612 that employs proprietary lead-pin configuration in a field-tested, general-purpose package and also consists of 2 IGBTs and 2 diodes, that is, 4 elements in total. Use of this MGQ612 allows reduction of the printed circuit board mounting area and heatsink area to about one third, resulting in cost reduction in the printed circuit board and heatsinks. This also contributes to reducing man-hours in mounting the components.

Normally, elements with a breakdown voltage of 300 V to 600 V are used in the panel driving circuit, but the higher the breakdown voltage of IGBTs and diodes, the higher the saturation voltage (Note 1) and forward voltage (Note 2), meaning larger dissipation. By  designing the IGBTs and diodes optimum for the panel driving circuits, the newly developed MGQ612 realizes such lower losses as saturation voltage of 1.6 V typ. and forward voltage of 0.9 V typ. (a reduction of 20 to 25% compared to existing models) while having a high breakdown voltage of 600 V.

Note 1. Saturation voltage
Voltage that causes the power consumption inside an IGBT when a current passes through the IGBT

Note 2. Forward voltage
Voltage that causes the power consumption inside a diode when a current passes through the diode in the forward direction.
 
2. Features
 
(1) Two IGBTs and two diodes are mounted in a TO-3P 5-pin package (dimensions of resin part: 16 × 20 × 5 mm), enabling a reduction of the printed circuit board mounting area and heat sink area to one third, as well as a reduction man-hours in mounting the components.
(2) With a high collector-emitter voltage (breakdown voltage) of 600 V and large collector current (pulse current) of 200 A, this module is ideal for high-voltage large-current panel driving circuits.
(3) This module realizes low dissipation with a saturation voltage of 1.6 V typ. (@ Ic = 20 A) between the collector and emitter of the IGBTs, and a diode forward voltage of 0.9 V typ. (@ IF = 10 A).
(4) A bidirectional switch can be realized with a single module.
   
3. Product Lineup
 
Parameter Symbol Rating Units
Collector-emitter voltage VCES 600 V
Collector current (DC) Ic (DC) 20 A
Collector current (pulse) Ic (pulse) 200 A
Power dissipation Pc 140 W
Collector-emitter
saturation voltage
VCE (sat) 1.6 typ. (@ Ic = 20 A) V
Diode forward voltage VF 0.9 typ. (@ IF = 10 A) V
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