May 21, 2007

SPF5104 - IC for automotive HID lamp lighting
Realizes one-fourth footprint against our conventional products by employing proprietary Stacked Multi-Structure.
Contributes to miniaturization and cost reduction of electronic ballasts for HID lamps.

Sanken Electric Co., Ltd. has announced the recent development of a patent-pending Stacked Multi-Structure featuring piled-up two power elements, and the development of automotive high intensity discharge (HID) lamp lighting IC SPF5104 having a control element and four power elements mounted into a single surface-mount package, downsizing the footprint one-fourth of our conventional counter product.

Sample shipment will begin on May 30th (Sample price: 1,000 Yen). Mass production will be launched in October, 2007 starting with 10k pcs/month, then ramping up to 200k pcs/month from autumn, 2010.
   
1. Development Background and Product Overview
  HID lamps have been increasingly used in recent years as automotive headlights and are superior to existing halogen lamps with respect to brightness, power consumption, and lifespan, but HID lamps require an electronic ballast supplying stable power to light them. To promote the HID lamps into the market, miniaturization and cost reduction of electronic ballasts are important, and miniaturization and cost reduction of mounting parts are also strongly demanded.

Until now, although Sanken has been selling the ICs lighting the HID lamps, the ICs having a control element and four power elements contained in a single package, the conventional products have these elements arrayed in the same plane and sealed in a single in-line package (resin part dimensions: 31 ´ 16 ´ 5 mm).  In contrast, our recently developed SPF5104 achieves the mounting footprint of about one-fourth that of our conventional product (resin part dimensions: 17 ´ 7.5 ´ 1.8 mm), by using our proprietary Stacked Multi-Structure that allows four power elements to form into two groups, then piling up two elements in each group, aligning these two groups and a control element, and sealing them in a surface-mount package.

By the way, the automotive HID lamps use mercury as light-emitting material, but there is a trend for using xenon gas as a substitute in consideration of environmental protection.  Xenon gas, however, has low luminance efficiency, requiring a large current at ignition, thereby increasing heat generation due to increased current at the power elements.
 
2. Features
(1)

Mounts the elements in a surface-mount package with Stacked Multi-Structure.

Mounting footprint of about one-fourth that of our conventional single in-line package (resin part dimensions: 31 × 16 × 5 mm) is achieved by employing our proprietary Stacked Multi-Structure that enables two power elements to be piled up, and by employing a surface-mount package (resin part dimensions: 17 × 7.5 × 1.8 mm).

<Conventional Structure>
A control element and four power elements are placed in the same plane.


<Stacked Multi-Structure>
A control element and two sets of piled-up two elements are placed in the same plane.
(2) Employs IGBTs as power elements and mounts them in a high heat-dissipation package.
Heat generation is suppressed by employing IGBTs that generate less heat than MOSFETs at large current. In addition, due to employing a package with an exposed frame working as a heatsink, high heat-dissipation is achieved by soldering the frame directly to PCBs, heatsinks, etc. Thus, the IC is applicable to mercury-free lamps that require large current and generate high heat.
(3) Built-in dedicated control element.
Since high voltage is required to ignite a HID lamp, the third generation Bipolar CMOS DMOS (BCD) process of 600V breakdown voltage is employed, and a dedicated control element, with a built-in bootstrap circuit of a high-side power element for power supplies and also with built-in versatile protection circuits, is developed and mounted.
(4) Versatile functions
Low-voltage protection circuit
Initial operation function
Preventive function against simultaneous turn-on of power elements
Diodes for bootstrap circuits
(Internal diodes are optional.)
   
3. Specifications
 
Parameters Symbol Ratings Unit
min typ max
IGBT
Output breakdown voltage
BVout 500 - - V
IGBT
Output ON voltage
Vout(on) - 1.8(@Io=3A) 2.4(@Io=3A) V
Circuit current IB - 2 5 mA
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